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Freescale Semiconductor Technical Data
Document Number: MRFG35010AN Rev. 0, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 10 dB Efficiency -- 25% ACPR @ 5 MHz Offset -- - 43 dBc in 3.84 MHz Channel Bandwidth * 9 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35010ANT1
3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS VGS Pin Tstg Tch TC Symbol RJC
Value 15 -5 33 - 65 to +150 175 - 40 to +85
Unit Vdc Vdc dBm C C C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 1 W CW Value (2) 6.5 Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35010ANT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.2 Typ 2.9 <1 0.1 2 - 1.0 - 0.95 Max -- 100 1 15 - 0.7 - 0.7 Unit Adc Adc mAdc mAdc Vdc Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f = 3550 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 9 23 -- 10 25 - 43 -- -- - 40 dB % dBc
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB -- 9 -- W
MRFG35010ANT1 2 RF Device Data Freescale Semiconductor
VBIAS
VSUPPLY
C11
C10
C9
C8
C7
C6
C5 C4 C19
C18
C17
C16
C15
C14
C13
C12
Z9
Z12
R1 RF INPUT Z1 Z2 Z3 Z4 Z5 C3 C1 C2 C22 C21 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 Z17 RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Z9
0.045 0.045 0.020 0.045 0.045 0.045 0.300 0.146 0.025
x 0.689 Microstrip x 0.089 Microstrip x 0.360 Microstrip x 0.029 Microstrip x 0.061 Microstrip x 0.055 Microstrip x 0.125 Microstrip x 0.070 Microstrip x 0.485 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.400 x 0.215 Microstrip 0.025 x 0.497 Microstrip 0.025 x 0.271 Microstrip 0.025 x 0.363 Microstrip 0.025 x 0.041 Microstrip 0.045 x 0.050 Microstrip 0.045 x 0.467 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part C1, C21, C22 C2 C3 C4, C19, C20 C5, C18 C6, C17 C7, C16 C8, C15 C9, C14 C10, C13 C11, C12 R1 Description 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K pF Chip Capacitors 10 F, 50 V Chip Capacitors 50 Chip Resistor Part Number 08051J0R5BBT 06035J0R2BBT 06035J0R5BBT 08051J6R8BBT 100A100JP150XT 100A101JP150XT 100B101JP500XT 100B102JP50XT CDR33BX104AKWS 200B393KP50XT GRM55DR61H106KA88B P51ETR - ND Manufacturer AVX AVX AVX AVX ATC ATC ATC ATC Kemet ATC Murata Newark
MRFG35010ANT1 RF Device Data Freescale Semiconductor 3
C11
C10
C9
C14 C13
C12
C8 C7 C6 C5
C15 C16 C17 C18 C19
C4 C3
R1 C20
C1
C2
C22
C21
MRFG35010XX, Rev. 5
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010ANT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
12 GT, TRANSDUCER GAIN (dB) 10 VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth S = 0.875 -131.0_ L = 0.849 -145.8_ GT 30 50
8
6
20
4
D
10
2 10 15 20 25 30 35 Pout, OUTPUT POWER (dBm)
0 40
Figure 3. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-10 VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.875 -131.0_, L = 0.849 -145.8_ IRL -30
-10 IRL, INPUT RETURN LOSS (dB)
-20
-15
-20
-40
-25
-50
ACPR
-30
-60 15 20 25 30 35 Pout, OUTPUT POWER (dBm)
-35 40
Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
D, DRAIN EFFICIENCY (%)
40
MRFG35010ANT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 8 6 4 2 20 24 28 32 36 Pout, OUTPUT POWER (dBm) D VDS = 12 Vdc, IDQ = 130 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 60 50 40 30 20 10 0 40
Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 VDS = 12 Vdc, IDQ = 140 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) -5 IRL, INPUT RETURN LOSS (dB)
-20
-10
-30 IRL -40
-15
-20
-50 ACPR -60 20 25 30 Pout, OUTPUT POWER (dBm) 35
-25
-30 40
Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35010ANT1 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
Zo = 25
Zload
f = 3550 MHz
Zsource
f = 3550 MHz
VDD = 12 Vdc, IDQ = 130 mA, Pout = 1 W Avg. f MHz 3550 Zsource W 4.0 - j22.6 Zload W 4.5 - j15.3
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRFG35010ANT1 RF Device Data Freescale Semiconductor 7
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 130 mA, TC = 25C, 50 ohm system)
f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.945 0.946 0.947 0.947 0.948 0.948 0.948 0.948 0.949 0.950 0.949 0.950 0.950 0.950 0.949 0.950 0.950 0.950 0.949 0.949 0.949 0.948 0.948 0.948 0.948 0.949 0.950 0.950 0.950 0.950 0.951 0.950 0.950 0.950 0.949 0.949 0.949 0.951 0.949 0.948 0.949 0.948 0.948 0.946 0.945 0.944 - 174.56 - 176.04 - 177.32 - 178.45 - 179.56 179.46 178.47 177.54 176.67 175.80 174.99 174.21 173.45 172.67 171.97 171.32 170.63 169.95 169.34 168.69 168.05 168.83 168.16 167.46 166.80 166.20 165.51 164.95 164.28 163.65 162.95 162.45 161.82 161.22 160.64 160.02 159.39 158.85 158.25 157.61 157.00 156.38 155.73 155.07 154.41 153.70 |S21| 4.019 3.663 3.366 3.112 2.895 2.706 2.540 2.393 2.262 2.144 2.036 1.944 1.855 1.775 1.701 1.634 1.571 1.513 1.459 1.409 1.365 1.317 1.278 1.238 1.203 1.168 1.137 1.108 1.080 1.053 1.029 1.004 0.983 0.962 0.944 0.926 0.910 0.894 0.880 0.867 0.855 0.843 0.833 0.823 0.813 0.805 S21 84.19 82.53 80.98 79.47 77.97 76.52 75.04 73.57 72.11 70.67 69.21 67.79 66.34 64.92 63.52 62.09 60.69 59.26 57.88 56.49 55.14 53.93 52.65 51.29 50.05 48.79 47.59 46.33 45.15 43.95 42.80 41.72 40.60 39.44 38.45 37.33 36.28 35.26 34.21 33.14 32.09 31.01 29.90 28.86 27.71 26.55 |S12| 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.021 0.021 0.021 0.021 0.022 S12 3.30 2.54 2.19 1.57 0.87 0.62 - 0.13 - 0.49 - 0.94 - 1.83 - 2.42 - 2.91 - 3.44 - 4.10 - 4.38 - 4.91 - 5.31 - 6.04 - 6.58 - 7.02 - 7.32 - 7.26 - 7.55 - 7.83 - 8.50 - 9.20 - 9.26 - 9.47 - 9.71 - 9.95 - 10.45 - 10.68 - 11.15 - 11.31 - 11.94 - 12.19 - 12.28 - 12.28 - 12.08 - 12.46 - 12.24 - 12.56 - 12.08 - 12.64 - 12.48 - 13.14 |S22| 0.780 0.781 0.781 0.781 0.781 0.781 0.780 0.780 0.781 0.781 0.780 0.781 0.781 0.781 0.781 0.781 0.782 0.783 0.783 0.784 0.785 0.787 0.788 0.789 0.790 0.790 0.791 0.791 0.792 0.793 0.793 0.794 0.794 0.794 0.796 0.797 0.796 0.797 0.797 0.796 0.797 0.796 0.796 0.796 0.796 0.794 S22 - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.44 160.84 160.36 159.76 159.37 158.91 158.40 158.00 157.80 157.42 157.19 157.03 156.78 156.48 156.47 156.16 155.87 155.85 155.53 155.28 155.24 154.81 154.51
MRFG35010ANT1 8 RF Device Data Freescale Semiconductor
Table 6. Class AB Common Source S - Parameters (VDD = 12 Vdc, IDQ = 130 mA, TC = 25C, 50 ohm system) (continued)
f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.943 0.943 0.942 0.939 0.942 0.941 0.939 0.939 0.938 0.941 0.937 0.936 0.935 0.937 0.934 0.934 0.933 0.931 0.933 0.933 0.933 0.931 0.928 0.925 0.921 0.920 0.918 0.923 0.919 0.922 0.924 0.926 0.926 0.926 0.926 0.925 0.924 0.924 0.922 0.921 0.919 0.917 0.916 0.914 0.912 153.02 152.31 151.61 150.84 150.15 149.40 148.59 147.75 146.97 145.84 145.28 144.36 143.56 142.81 141.86 140.99 140.12 139.20 138.37 137.48 136.55 135.57 134.64 133.78 133.05 132.39 131.72 130.82 129.91 129.26 128.37 127.34 126.32 125.27 124.13 123.09 122.08 120.81 119.61 118.44 117.22 115.94 114.60 113.24 111.82 |S21| 0.796 0.788 0.781 0.775 0.768 0.761 0.757 0.751 0.747 0.743 0.736 0.733 0.728 0.724 0.719 0.716 0.711 0.708 0.704 0.700 0.696 0.693 0.689 0.685 0.682 0.678 0.675 0.673 0.669 0.666 0.664 0.662 0.658 0.658 0.657 0.654 0.654 0.654 0.653 0.654 0.654 0.653 0.655 0.657 0.657 S21 25.46 24.29 23.11 22.01 20.75 19.55 18.31 17.03 15.68 14.42 12.96 11.56 10.18 8.84 7.37 6.03 4.58 3.03 1.61 0.20 - 1.33 - 2.73 - 4.11 - 5.62 - 7.05 - 8.42 - 9.92 - 11.37 - 12.78 - 14.22 - 15.61 - 16.92 - 18.36 - 19.76 - 21.11 - 22.50 - 23.83 - 25.14 - 26.55 - 27.97 - 29.30 - 30.70 - 32.19 - 33.61 - 35.10 |S12| 0.022 0.022 0.022 0.022 0.022 0.023 0.023 0.023 0.023 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.026 0.026 0.027 0.027 0.027 0.028 0.028 0.028 0.029 0.029 0.029 0.030 0.030 0.030 0.031 0.031 0.032 0.032 0.032 0.033 0.033 0.034 S12 - 13.75 - 14.19 - 14.81 - 15.38 - 15.83 - 16.06 - 16.58 - 17.33 - 17.60 - 18.35 - 18.68 - 19.36 - 19.65 - 19.96 - 19.70 - 19.69 - 20.44 - 21.24 - 22.19 - 22.67 - 23.74 - 24.10 - 24.28 - 24.60 - 25.13 - 25.07 - 25.69 - 26.05 - 26.99 - 27.58 - 28.51 - 28.82 - 29.48 - 29.54 - 30.12 - 30.82 - 31.17 - 31.73 - 32.31 - 33.11 - 33.53 - 34.28 - 34.59 - 34.92 - 35.27 |S22| 0.794 0.794 0.792 0.791 0.792 0.787 0.789 0.788 0.786 0.789 0.785 0.780 0.780 0.781 0.775 0.776 0.773 0.768 0.769 0.767 0.763 0.765 0.767 0.765 0.769 0.772 0.767 0.766 0.768 0.762 0.764 0.761 0.756 0.759 0.758 0.753 0.755 0.754 0.750 0.752 0.751 0.747 0.748 0.748 0.743 S22 154.30 153.85 153.42 153.00 152.55 152.10 151.47 150.69 149.89 149.10 148.30 147.36 146.56 145.50 144.38 143.47 142.22 141.01 140.17 138.91 137.79 136.96 135.76 134.55 133.67 132.19 130.73 129.70 128.51 127.29 126.49 125.41 124.59 123.86 122.97 122.26 121.74 120.88 120.35 119.79 119.03 118.53 118.03 117.16 116.59
MRFG35010ANT1 RF Device Data Freescale Semiconductor 9
NOTES
MRFG35010ANT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
1
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
3
G
S
ZONE X
VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
RF Device Data Freescale Semiconductor
EEEEEE E EEEE E EEEEEE E EEEEEE EEE EEEEEE E
MRFG35010ANT1 11
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MRFG35010ANT1
Rev. 12 0, 5/2006 Document Number: MRFG35010AN
RF Device Data Freescale Semiconductor

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